HD64F3437TF16 Datasheet, PDF (566/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

• Notes on Use of Erase-Program Mode
1. Auto-erase mode supports only total memory erasing.
2. Do not perform a command write during auto-erasing.
3. Confirm normal end of auto-erasing by checking FO6. Alternatively, status read mode can also
be used for this purpose (in FO7 status polling, the pin is the auto-erase operation end
identification pin).
4. Status polling FO6 and FO7 pin information is retained until the next command write. As long
as the next command write has not been performed, reading is possible by enabling CE and
OE.
Status Read Mode
1. Status read mode is used to identify what kind of abnormal end has occurred. This mode
should be used if an abnormal end occurs in auto-program or auto-erase mode.
2. The return code is retained until a command write for a mode other than status read mode is
executed.
Table 21.18 AC Characteristics in Status Read Mode
(Conditions: V_CC = 5.0 V ±10%, V_SS = 0 V, T_a = 25°C ±5°C)
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Programming pulse width
OE output delay time
Disable delay time
CE output delay time
WE rise time
WE fall time
Symbol
t _nxtc
t _ceh
t _ces
t _dh
t _ds
t _wep
t _oe
t _df
t _ce
t_r
t_f
Min
20
0
0
50
50
70
Max
Unit
µs
ns
ns
ns
ns
ns
150
ns
100
ns
150
ns
30
ns
30
ns
Notes
537