HD64F3437TF16 Datasheet, PDF (525/752 Pages) Hitachi Semiconductor – 12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.

Table 20.18 DC Characteristics of Flash Memory
Conditions: V_CC = 2.7 V to 5.5 V^*2, AV_CC = 2.7 V to 5.5 V^*2, AV_ref = 2.7 V to AV_CC*2,
V_SS = AV_SS = 0 V, V_PP = 12.0 ± 0.6 V, T_a = –20°C to +75°C (regular specifications),
T_a = –40°C to +85°C (wide-range specifications)
Item
Symbol Min
Typ Max Unit Test Conditions
High-voltage
FV_PP, MD₁
V_H
(12 V) threshold
level^*1
V_CC + 2 —
11.4 V
FV_PP current
During read I_PP
During
programming
—
—
10
µA V_PP = 2.7 to 5.5 V
—
10
20
mA V_PP = 12.6 V
—
20
40
mA
During
erasure
—
20
40
mA
Notes: *1 The listed voltages describe the threshold level at which high-voltage application is
recognized. In boot mode and while flash memory is being programmed or erased, the
applied voltage should be 12.0 V ± 0.6 V.
*2 In the LH version, V_CC = 3.0 V to 5.5 V, AV_CC = 3.0 V to 5.5 V, AV_ref = 3.0 V to AV_CC.
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