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C8051F960-B-GM Datasheet, PDF (73/492 Pages) Silicon Laboratories – Ultra Low Power 128K, LCD MCU Family | |||
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C8051F96x
Table 4.15. IREF0 Electrical Characteristics
VBAT = 1.8 to 3.8 V, â40 to +85 °C, unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Units
Static Performance
Resolution
6
bits
Output Compliance Range
Integral Nonlinearity
Low Power Mode, Source
0
High Current Mode, Source
0
Low Power Mode, Sink
0.3
High Current Mode, Sink
0.8
â VBAT â 0.4
â
â
VBAT â 0.8
VBAT
V
â
VBAT
â
<±0.2
±1.0
LSB
Differential Nonlinearity
â
<±0.2
±1.0
LSB
Offset Error
â
<±0.1
±0.5
LSB
Full Scale Error
Absolute Current Error
Low Power Mode, Source
â
â
±5
%
High Current Mode, Source â
â
±6
%
Low Power Mode, Sink
â
â
±8
%
High Current Mode, Sink
â
â
±8
%
Low Power Mode
Sourcing 20 µA
â
<±1
±3
%
Dynamic Performance
Output Settling Time to 1/2 LSB
â
300
â
ns
Startup Time
â
1
â
µs
Power Consumption
Net Power Supply Current ï
Low Power Mode, Source
(VBAT supplied to IREF0 minus
IREF0DAT = 000001
â
10
â
µA
any output source current)
IREF0DAT = 111111
â
10
â
µA
High Current Mode, Source
IREF0DAT = 000001
â
10
â
µA
IREF0DAT = 111111
â
10
â
µA
Low Power Mode, Sink
IREF0DAT = 000001
â
1
â
µA
IREF0DAT = 111111
â
11
â
µA
High Current Mode, Sink
IREF0DAT = 000001
â
12
â
µA
IREF0DAT = 111111
â
81
â
µA
Note: Refer to â6.1. PWM Enhanced Modeâ on page 103 for information on how to improve IREF0 resolution.
Rev. 1.0
73
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