C8051F960-B-GM Datasheet, PDF (69/492 Pages) Silicon Laboratories – Ultra Low Power 128K, LCD MCU Family

C8051F96x
Table 4.7. Power Management Electrical Specifications
V_BAT = 1.8 to 3.8 V, –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min Typ
Idle Mode Wake-up Time
2
—
Suspend Mode Wake-up Time
CLKDIV = 0x00
—
400
Low Power or Precision Osc.
Sleep Mode Wake-up Time
—
2
Max
Units
3 SYSCLKs
—
ns
—
µs
Table 4.8. Flash Electrical Characteristics
V_BAT = 1.8 to 3.8 V, –40 to +85 °C unless otherwise specified.,
Parameter
Flash Size
Conditions
C8051F960/1/2/3
C8051F964/5
C8051F966/7
C8051F968/9
Endurance
Erase Cycle Time
Write Cycle Time
Min
131072
65536
32768
16384
20 k
28
57
Typ
—
—
—
—
100k
32
64
Max
Units
—
bytes
—
bytes
—
bytes
—
bytes
—
Erase/Write
Cycles
36
ms
71
µs
Table 4.9. Internal Precision Oscillator Electrical Characteristics
V_BAT = 1.8 to 3.8 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Oscillator Frequency
Oscillator Supply Current 
(from V_BAT)
–40 to +85 °C,
V_BAT = 1.8–3.8 V
24
25 °C; includes bias current
of 50 µA typical
—
*Note: Does not include clock divider or clock tree supply current.
Typ
24.5
300*
Max
25
—
Units
MHz
µA
Table 4.10. Internal Low-Power Oscillator Electrical Characteristics
V_BAT = 1.8 to 3.8 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
–40 to +85 °C,
V_BAT = 1.8–3.8 V
18
20
22
Oscillator Supply Current 
25 °C
(from V_BAT)
No separate bias current
—
100*
—
required
*Note: Does not include clock divider or clock tree supply current.
Units
MHz
µA
Rev. 1.0
69