HD6473032F16 Datasheet, PDF (672/847 Pages) Renesas Technology Corp – Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Series

Section 21 Electrical Characteristics
21.2.5 Flash Memory Characteristics
Table 21.10 Flash Memory Characteristics
Conditions: V_CC = 4.5 V to 5.5 V, AV_CC = 4.5 V to 5.5 V, V_SS = AV_SS = 0 V, T_a = 0°C to +75°C
(program/erase operating temperature range)
Item
Programming time^*1*2*4
Symbol Min
tP
—
Conditions
Typ
Max
10
200
Erase time^*1*3*5
Reprogramming count
Data retention period
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^*1*4
tE
NWEC
TDRP
tsswe
tspsu
tsp30
—
100^*6
10^*8
100
1200
10.000^*7 —
—
—
1
1
—
50 50
—
28 30
32
tsp200 198 200
202
tsp10 8
10
12
Erase
Wait time after P bit clear^*1
Wait time after PSU bit clear^*1
Wait time after PV bit setting^*1
tcp
tcpsu
tspv
Wait time after H'FF dummy
write^*1
tspvr
Wait time after PV bit clear^*1
tcpv
Wait time after SWE bit clear^*1 tcswe
Maximum programming count^*1*4 N
Wait time after SWE bit setting^*1 tsswe
Wait time after ESU bit setting^*1 tsesu
Wait time after E bit setting^*1*5 tse
Wait time after E bit clear^*1
Wait time after ESU bit clear^*1
Wait time after EV bit setting^*1
Wait time after H'FF dummy
write^*1
Wait time after EV bit clear^*1
Wait time after SWE bit clear^*1
Maximum erase count^*1*5
tce
tcesu
tsev
tsevr
tcev
tcswe
N
5
5
5
5
4
4
2
2
2
2
100 100
——
1
1
100 100
10 10
10 10
10 10
20 20
2
2
4
4
100 100
12 —
—
—
—
—
—

1000
—
—
100
—
—
—
—
—

120
Unit
Notes
ms/128
bytes
ms/block
Times
Years
µs
µs
µs
Programming
time wait
µs
Programming
time wait
µs
Additional
programming
time wait
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
Erase time
wait
µs
µs
Times
Rev. 3.00 Mar 21, 2006 page 642 of 814
REJ09B0302-0300