HD6473032F16 Datasheet, PDF (633/847 Pages) Renesas Technology Corp – Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Series

Section 18 ROM
Similarly perform flash memory program execution and data read after clearing the SWE bit
even when using the RAM emulation function with a high level input to the FWE pin.
However, RAM area that overlaps flash memory space can be read/programmed whether the
SWE bit is set or cleared.
7. Do not use an interrupt during flash memory programming or erasing.
Since programming/erase operations (including emulation by RAM) have priority when a high
level is input to the FWE pin, disable all interrupt requests, including NMI.
8. Do not perform additional programming. Reprogram flash memory after erasing.
With on-board programming, program to 128-byte programming unit blocks one time only.
Program to 128-byte programming unit blocks one time only even in the writer mode. Erase all
the programming unit blocks before reprogramming.
9. Before programming, check that the chip is correctly mounted in the PROM programmer.
Overcurrent damage to the device can result if the index marks on the PROM programmer
socket, socket adapter, and chip are not correctly aligned.
10. Do not touch the socket adapter or chip during programming. Touching either of these can
cause contact faults and write errors.
Rev. 3.00 Mar 21, 2006 page 603 of 814
REJ09B0302-0300