HD6473032F16 Datasheet, PDF (585/847 Pages) Renesas Technology Corp – Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Series

Section 18 ROM
Section 18 ROM
18.1 Features
The H8/3052BF has 512 kbytes of on-chip flash memory. The features of the flash memory are
summarized below.
• Four flash memory operating modes
 Program mode
 Erase mode
 Program-verify mode
 Erase-verify mode
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can
be performed. To erase the entire flash memory, each block must be erased in turn. Block
erasing can be performed as required on 4 kbytes, 32 kbytes, and 64 kbytes blocks.
• Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,
equivalent approximately to 80 µs (typ.) per byte, and the erase time is 100 ms (typ.).
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
 Boot mode
 User program mode
• Automatic bit rate adjustment
With data transfer in boot mode, the LSI’s bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
• Protect modes
There are two protect modes, hardware and software, which allow protected status to be
designated for flash memory program/erase/verify operations.
Rev. 3.00 Mar 21, 2006 page 555 of 814
REJ09B0302-0300