SH7147 Datasheet, PDF (1082/1108 Pages) Renesas Technology Corp – 32-Bit RISC Microcomputer SuperH™ RISC engine Family

Section 25 Electrical Characteristics
25.5 Flash Memory Characteristics
Table 25.21 Flash Memory Characteristics
Conditions (regular specifications):
V_CC = 4.5 V to 5.5 V, PV_CC = 4.5 V to 5.5 V,
AV_CC = 4.5 V to 5.5 V, AV_refh = 4.5 V to AV_CC,
V_SS = PLLV_SS = AV_SS = AV_refh = 0 V,
T_a = –40°C to +85°C
Conditions (wide-range specifications): V_CC = 3.0 V to 3.6 V, PV_CC = 4.5 V to 5.5 V,
AV_CC = 4.5 V to 5.5 V, AV_refh = 4.5 V to AV_CC,
V_SS = PLLV_SS = AV_SS = AV_refh = 0 V,
T_a = –40°C to +85°C*⁶
Item
Symbol
Min.
Typ.
Max.
Unit
Programming time*¹*²*⁴
t_P
Erase time*¹*³*⁵
t
E
—
1
10
—
8
25
ms/128 bytes
ms/Kbyte
Reprogramming count
N_WEC
—
—
100
Times
Notes: 1. Use the on-chip programming/erasing routine for programming/erasure.
2. When all 0 are programmed.
3. When a block is 64 Kbytes.
4. The total reprogramming times (programming time + erase time) are as follows:
256-Kbyte version: 60 s (Typ.), 90 s (reference value), 120 s (Max.)
384-Kbyte version: 90 s (Typ.), 120 s (reference value), 180 s (Max.)
512-Kbyte version: 120 s (Typ.), 180 s (reference value), 240 s (Max.)
However, 90% of the values are within the reference value.
5. t_E distributes focusing on near the Typ. value.
6. Programming/erasure only: 85°C
Normal operation except for programming/erasure: 125°C
Rev. 3.00 Oct. 06, 2008 Page 1058 of 1080
REJ09B0230-0300