C8051F93X Datasheet, PDF (62/330 Pages) Silicon Laboratories – Pipelined intstruction architecture executes 70 of instruction in 1 or 2 system clocks

C8051F93x-C8051F92x
Table 4.10. Temperature Sensor Electrical Characteristics
V_DD = 1.8 to 3.6V V, –40 to +85 °C unless otherwise specified.
Parameter
Linearity
Conditions
Min
—
Slope
—
Slope Error*
—
Offset
Temp = 25 °C
—
Offset Error*
Temp = 25 °C
—
Temperature Sensor Turn-On
—
Time
Supply Current
—
*Note: Represents one standard deviation from the mean.
Typ
±1
3.40
40
1025
18
1.7
35
Max
—
—
—
—
—
—
—
Units
°C
mV/°C
µV/°C
mV
mV
µs
µA
Table 4.11. Voltage Reference Electrical Characteristics
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Output Voltage
VREF Turn-on Time
Conditions
Min Typ
Internal High Speed Reference (REFSL[1:0] = 11)
–40 to +85 °C,
V_DD = 1.8–3.6 V
1.60 1.65
—
—
Supply Current
—
200
Internal Precision Reference (REFSL[1:0] = 00, REFOE = 1)
Output Voltage
–40 to +85 °C,
V_DD = 1.8–3.6 V
1.645 1.680
VREF Short-Circuit Current
—
3.5
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
VREF Turn-on Time 3
Load = 0 to 200 µA to AGND
—
400
4.7 µF tantalum, 0.1 µF ceramic
—
15
bypass, settling to 0.5 LSB
0.1 µF ceramic bypass, settling to _—
300
0.5 LSB
no bypass cap, settling to 0.5 LSB —
25
Supply Current
—
15
Input Voltage Range
External Reference (REFSL[1:0] = 00, REFOE = 0)
0
—
Input Current
Sample Rate = 300 ksps; VREF = _—
5.25
3.0 V
Max
1.70
1.5
—
1.715
—
—
—
—
—
—
V_DD
—
Units
V
µs
µA
V
mA
µV/µA
ms
µs
µs
µA
V
µA
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Rev. 1.3