C8051F93X Datasheet, PDF (60/330 Pages) Silicon Laboratories – Pipelined intstruction architecture executes 70 of instruction in 1 or 2 system clocks

C8051F93x-C8051F92x
Table 4.5. Power Management Electrical Specifications
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Idle Mode Wake-up Time
Conditions
Min Typ
2
—
Suspend Mode Wake-up Time Low power oscillator
—
400
Precision oscillator
—
1.3
Sleep Mode Wake-up Time Two-cell mode
—
2
One-cell mode
—
10
Max
Units
3
SYSCLKs
—
ns
—
µs
—
µs
—
µs
Table 4.6. Flash Electrical Characteristics
V_DD = 1.8 to 3.6 V, –40 to +85 °C unless otherwise specified.
Parameter
Flash Size
Scratchpad Size
Conditions
C8051F930/1
C8051F920/1
Min
Typ
65536* —
32768
—
1024
—
Endurance
1k
30k
Erase Cycle Time
Write Cycle Time
28
32
57
64
*Note: 1024 bytes at addresses 0xFC00 to 0xFFFF are reserved.
Max
—
—
1024
—
36
71
Units
bytes
bytes
bytes
Erase/Write
Cycles
ms
µs
Table 4.7. Internal Precision Oscillator Electrical Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Oscillator Frequency
Oscillator Supply Current 
(from V_DD)
–40 to +85 °C, 
V_DD = 1.8–3.6 V
24
25 °C; includes bias current
of 90–100 µA
—
*Note: Does not include clock divider or clock tree supply current.
Typ
24.5
300*
Max
25
—
Units
MHz
µA
Table 4.8. Internal Low-Power Oscillator Electrical Characteristics
V_DD = 1.8 to 3.6 V; T_A = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Oscillator Frequency
–40 to +85 °C, 
V_DD = 1.8–3.6 V
18
20
22
Oscillator Supply Current 
(from V_DD)
25 °C
No separate bias current
required.
—
100*
—
*Note: Does not include clock divider or clock tree supply current.
Units
MHz
µA
60
Rev. 1.3