C8051F93X Datasheet, PDF (45/330 Pages) Silicon Laboratories – Pipelined intstruction architecture executes 70 of instruction in 1 or 2 system clocks

C8051F93x-C8051F92x
4. Electrical Characteristics
Throughout the Electrical Characteristics chapter, “VDD” refers to the VDD/DC+ Supply Voltage.
4.1. Absolute Maximum Specifications
Table 4.1. Absolute Maximum Ratings
Parameter
Conditions
Ambient temperature under bias
Storage Temperature
Voltage on any Port I/O Pin or
RST with respect to GND
VDD > 2.2 V
VDD < 2.2 V
Voltage on VBAT with respect to One-Cell Mode
GND
Two-Cell Mode
Voltage on VDD/DC+ with respect
to GND
Maximum Total current through
VBAT, DCEN, VDD/DC+ or GND
Maximum output current sunk by
RST or any Port pin
Maximum total current through all
Port pins
DC-DC Converter Output Power
Min
Typ
Max
Units
–55
—
125
°C
–65
—
150
°C
–0.3
—
5.8
V
–0.3
— VDD + 3.6
–0.3
—
2.0
V
–0.3
—
4.0
–0.3
—
4.0
V
—
—
500
mA
—
—
100
mA
—
—
200
mA
—
—
110
mW
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the devices at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Rev. 1.3
45