HD64F3028F25 Datasheet, PDF (704/925 Pages) Renesas Technology Corp – Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Series

21.2.6 Flash Memory Characteristics
Table 21.19 shows the flash memory characteristics.
Table 21.19 Flash Memory Characteristics
Conditions: V_CC = 3.0 V to 3.6 V, AV_CC = 3.0 V to 3.6 V, V_SS = AV_SS = 0 V
T_a = 0 to +75°C (Programming/erasing operating temperature range: regular
specification)
T_a = 0 to +85°C (Programming/erasing operating temperature range: wide-range
specification)
Item
Symbol Min Typ Max Unit
Notes
Programming time^{*1 *2 *4}
tP
—
10
200 ms/
128 bytes
Erase time^{*1 *3 *5}
tE
—
100 1200 ms/block
Reprogramming count
NWEC
—
—
100 Times
Programming Wait time after SWE bit setting^*1 tsswe
1
1
—
µs
Wait time after PSU bit setting^*1 tspsu
50
50
—
µs
Wait time after P bit setting^{*1 *4}
tsp30
28 30 32 µs
Programming
time wait
tsp200
198 200 202 µs
Programming
time wait
Erase
tsp10
Wait time after P bit clear^*1
tcp
Wait time after PSU bit clear^*1
tcpsu
Wait time after PV bit setting^*1
tspv
Wait time after H'FF dummy write^*1 tspvr
Wait time after PV bit clear^*1
tcpv
Wait time after SWE bit clear^*1
tcswe
Maximum programming count^{*1 *4} N
Wait time after SWE bit setting^*1 tsswe
Wait time after ESU bit setting^*1 tsesu
Wait time after E bit setting^{*1 *5}
tse
Wait time after E bit clear^*1
tce
Wait time after ESU bit clear^*1
tcesu
Wait time after EV bit setting^*1
tsev
Wait time after H'FF dummy write^*1 tsevr
Wait time after EV bit clear^*1
tcev
Wait time after SWE bit clear^*1
tcswe
Maximum erase count^{*1 *5}
N
8
10 12 µs
5
5
—
µs
5
5
—
µs
4
4
—
µs
2
2
—
µs
2
2
—
µs
100 100 —
µs
—
—
1000 Times
1
1
—
µs
100 100 —
µs
10 10 100 ms
10
10
—
µs
10
10
—
µs
20
20
—
µs
2
2
—
µs
4
4
—
µs
100 100 —
µs
12 — 120 Times
Additional-
programming
time wait
Erase time
wait
Rev. 2.00, 09/03, page 672 of 890