HD64F3028F25 Datasheet, PDF (630/925 Pages) Renesas Technology Corp – Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Series

Write FWE assessment program and transfer
program (and programming/erase control
program if necessary) beforehand
MD₂–MD₀ = 101 or 111
Reset-start
Transfer programming/erase control
program to RAM
Branch to programming/erase control
program in RAM area
FWE = high
(user program mode)
Execute programming/erase control
program in RAM
(flash memory rewriting)
Clear SWE bit, then release FWE
(user program mode clearing)
Branch to application program
in flash memory
Notes: 1. Do not apply a constant high level to the FWE pin. A high level should be applied to the
FWE pin only when programming or erasing flash memory (including execution of flash
memory emulation by RAM). Also, while a high level is applied to the FWE pin, the
watchdog timer should be activated to prevent overprogramming or overerasing due to
program runaway, etc.
2. For further information on FWE application and disconnection, see section 18.11, Flash
Memory Programming and Erasing Precautions.
3. In order to execute a normal read of flash memory in user program mode, the
programming/erase program must not be executing. It is thus necessary to ensure that
bits 6 to 0 in FLMCR1 are cleared to 0.
Figure 18.8 Example of User Program Mode Execution Procedure
Rev. 2.00, 09/03, page 598 of 890