HD6413008VF25 Datasheet, PDF (519/688 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Item
Three-state
leakage
current
Input pull-up
MOS current
Input
capacitance
Current
dissipation*²
Ports 4 to 6,
A₀ to A₁₉,
Ports 8 to B
RESO
Ports 4 and 5
NMI
All input pins
except NMI
Normal
operation
Symbol Min
|I |
⎯
TSI
⎯
−I_p
50
C_in
⎯
⎯
I_CC*³
⎯
⎯
Sleep mode
⎯
⎯
Module
⎯
standby mode
⎯
Standby mode
⎯
⎯
Analog power During A/D
AI_CC
⎯
supply current conversion
During A/D
⎯
and D/A
conversion
Idle
⎯
Reference During A/D AI
⎯
CC
current
conversion
During A/D
⎯
and D/A
conversion
Idle
⎯
RAM standby voltage
V_RAM
2.0
19. Electrical Characteristics
Typ Max
⎯
1.0
Unit
μA
Test
Conditions
V = 0.5 V to
in
V_CC −0.5 V
⎯
10.0
⎯
300
μA V_in = 0 V
μA V_in = 0 V
⎯
50
⎯
15
32
47
(5.0 V)
37
58
(5.0 V)
24
38
(5.0 V)
29
47
(5.0 V)
19
31
(5.0 V)
21
37
(5.0 V)
1.0
10
⎯
80
0.6
1.5
pF Vin = 0 V
pF ^{f = fmin}
Ta = 25°C
mA f = 20 MHz
mA f = 25 MHz
mA f = 20 MHz
mA f = 25 MHz
mA f = 20 MHz
mA f = 25 MHz
μA T_a ≤ 50°C
μA 50°C < T_a
mA
0.6
1.5
mA
0.01 5.0
0.45 0.8
2.0
3.0
μA DASTE = 0
mA
mA
0.01 5.0
⎯
⎯
μA DASTE = 0
V
Rev.4.00 Aug. 20, 2007 Page 473 of 638
REJ09B0395-0400