HD64F38024HV Datasheet, PDF (541/684 Pages) Renesas Technology Corp – Hardware Manual Renesas 8-Bit Single-Chip Microcomputer H8 Family/H8/300L Super Low Power Series

Section 16 Electrical Characteristics
16.8.6 Flash Memory Characteristics
Table 16.27 Flash Memory Characteristics
Condition:
AV_CC = 2.7 V to 5.5 V, V_SS = AV_SS = 0.0 V, V_CC = 2.7 V to 5.5 V (range of
operating voltage when reading), V_CC = 3.0 V to 5.5 V (range of operating voltage
when programming/erasing), T_a = –20°C to +75°C (range of operating temperature
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Item
Programming time^*1*2*4
Erase time^*1*3*5
Reprogramming count
Data retain period
Programming Wait time after
SWE-bit setting^*1
Wait time after
PSU-bit setting^*1
Wait time after
P-bit setting^*1*4
Symbol
tP
tE
NWEC
tDRP
x
y
z1
z2
z3
Min
—
—
1000^*8
10^*10
1
Values
Typ
Max
7
200
100
1200
10000^*9 —
—
—
—
—
50
—
—
28
30
32
198
200
202
8
10
12
Wait time after
α
P-bit clear^*1
Wait time after
β
PSU-bit clear^*1
Wait time after
γ
PV-bit setting^*1
Wait time after
ε
dummy write^*1
Wait time after
η
PV-bit clear^*1
Wait time after
θ
SWE-bit clear^*1
Maximum
N
programming
count^*1*4*5
5
—
5
—
4
—
2
—
2
—
100
—
—
—
—
—
—
—
—
—
1000
Test
Unit
Conditions
ms/128 bytes
ms/block
times
year
µs
µs
µs
1≤n≤6
µs
7 ≤ n ≤ 1000
µs
Additional
programming
µs
µs
µs
µs
µs
µs
times
Rev. 8.00 Mar. 09, 2010 Page 519 of 658
REJ09B0042-0800