HD64F38024HV Datasheet, PDF (503/684 Pages) Renesas Technology Corp – Hardware Manual Renesas 8-Bit Single-Chip Microcomputer H8 Family/H8/300L Super Low Power Series

Section 16 Electrical Characteristics
16.4.6 Flash Memory Characteristics
Table 16.13 lists the flash memory characteristics.
Table 16.13 Flash Memory Characteristics
AV_CC = 2.7 V to 3.6 V, V_SS = AV_SS = 0.0 V, V_CC = 2.7 V to 3.6 V (operating voltage range in
reading), V_CC = 3.0 V to 3.6 V (operating voltage range in programming/erasing), T_a = –20 to
+75°C (operating temperature range in programming/erasing)
Item
Programming time (per 128 bytes)^{*1 *2 *4}
Erase time (per block) ^{*1 *3 *6}
Maximum number of reprogrammings
Data retention time
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^{*1 *4}
Symbol Min
tP
tE
NWEC
—
—
1000
*⁸ *¹¹
100
*⁸ *¹²
tDRP
10^*10
x
1
y
50
z1
28
z2
198
z3
8
Erase
Wait time after P bit clear^*1
α
5
Wait time after PSU bit clear^*1
β
5
Wait time after PV bit setting^*1
γ
4
Wait time after dummy write^*1
ε
2
Wait time after PV bit clear^*1
η
2
Wait time after SWE bit clear^*1
θ
100
Maximum programming count^{*1 *4 *5}N
—
Wait time after SWE bit setting^*1 x
1
Wait time after ESU bit setting^*1 y
100
Wait time after E bit setting^{*1 *6} z
10
Wait time after E bit clear^*1
α
10
Wait time after ESU bit clear^*1
β
10
Wait time after EV bit setting^*1
γ
20
Wait time after dummy write^*1
ε
2
Wait time after EV bit clear^*1
η
4
Wait time after SWE bit clear^*1
θ
100
Maximum erase count^{*1 *6 *7}
N
—
Values
Typ Max
7
100
10000
*⁹
200
1200
—
10000 —
*⁹
—
—
—
—
—
—
30
32
200 202
10
12
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
—
—
—
—
—
100
—
—
—
—
—
—
—
—
—
—
—
—
—
120
Unit
ms
ms
Times
Test
Condition
Years
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
µs
Times
1≤n≤6
7 ≤ n ≤ 1000
Additional-
programming
Rev. 8.00 Mar. 09, 2010 Page 481 of 658
REJ09B0042-0800