HD64F38024HV Datasheet, PDF (203/684 Pages) Renesas Technology Corp – Hardware Manual Renesas 8-Bit Single-Chip Microcomputer H8 Family/H8/300L Super Low Power Series

Section 6 ROM
6.10.3 Memory Read Mode
1. After completion of auto-program/auto-erase/status read operations, a transition is made to the
command wait state. When reading memory contents, a transition to memory read mode must
first be made with a command write, after which the memory contents are read. Once memory
read mode has been entered, consecutive reads can be performed.
2. In memory read mode, command writes can be performed in the same way as in the command
wait state.
3. After powering on, memory read mode is entered.
4. Tables 6.14 to 6.16 show the AC characteristics.
Table 6.14 AC Characteristics in Transition to Memory Read Mode
Conditions: V_CC = 3.3 V ±0.3 V, V_SS = 0 V, T_a = 25°C ±5°C
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Symbol
tnxtc
tceh
tces
tdh
tds
twep
tr
tf
Min
20
0
0
50
50
70
—
—
Max Unit
—
µs
—
ns
—
ns
—
ns
—
ns
—
ns
30
ns
30
ns
Notes
Figure 6.13
A15−A0
CE
Command write
t_ces
t_ceh
t_nxtc
Memory read mode
Address stable
OE
WE
I/O7−I/O0
t_wep
t_f
t_r
t_ds
t_dh
Note: Data is latched on the rising edge of WE.
Figure 6.13 Timing Waveforms for Memory Read after Memory Write
Rev. 8.00 Mar. 09, 2010 Page 181 of 658
REJ09B0042-0800