HD6433044 Datasheet, PDF (699/867 Pages) Hitachi Semiconductor – Hitachi Single-Chip Microcomputer

21.3.5 Flash Memory Characteristics
Table 21-18 lists the flash memory characteristics.
Table 21-18 Flash Memory
Condition A: V_CC = 2.7 V to 5.5 V, AV_CC = 2.7 V to 5.5 V, V_REF = 2.7 V to AV_CC,
V_SS = AV_SS = 0 V, V_PP = 12 V ± 0.6 V, ø = 1 MHz to 8 MHz, T_a = –20°C to
+75°C (regular specifications), T_a = –40°C to +85°C (wide-range specifications)
Condition C: V_CC = 5.0 V ± 10%, AV_CC = 5.0 V ± 10%, V_REF = 4.5 V to AV_CC,
V_SS = AV_SS = 0 V, V_PP = 12 V ± 0.6 V, ø = 1 MHz to 16 MHz, T_a = –20°C to
+75°C (regular specifications), T_a = –40°C to +85°C (wide-range specifications)
Item
Symbol Min Typ Max
Unit Test Conditions
Programming time^*1
t_P
Erase time^*1
t_E
—
50
1000
µs
—
1
30
s
Erase-program cycle
Verify setup time 1^*1
Verify setup time 2^*1
Flash memory read
setup time^*2
N_WEC
t_VS1
t_VS2
t_FRS
—
—
100
time
4
—
—
µs
2
—
—
µs
50
—
—
100 —
—
µs
V_CC ≥ 4.5 V
µs
V_CC < 4.5 V
Notes: 1. To specify each time, follow the appropriate algorithm.
2. Before reading the flash memory, wait at least for the read setup time after clearing the
V_PPE bit; lowering the voltage supplied to V_PP from 12 V to 0–5 V; turning on the power
when the external clock is used; or returning from standby mode. When the V_PP voltage
is cut off, t_FRS indicates the time from when the V_PP falls below V_CC + 2 V to when the
flash memory is read.
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