HD6433044 Datasheet, PDF (628/867 Pages) Hitachi Semiconductor – Hitachi Single-Chip Microcomputer

High-Speed, High-Reliability Erasing: The H8/3048F flash memory uses a high-speed, high-
reliability erasing procedure. This procedure provides enhanced erasing speed without subjecting
the device to voltage stress and without sacrificing data reliability . Figure 18-24 shows the basic
high-speed, high-reliability erasing flowchart. Tables 18-22 and 18-23 list the electrical
characteristics during programming.
Start
Program 0 to all bits *
Address = 0
n=0
n+1→n
Erase setup/erase command
Wait (10 ms)
Erase-verify command
Address + 1 → address
Wait (6 µs)
Verification?
No good
OK
No
Last address?
Yes
No
n = 3000?
Yes
End
Fail
Note: * Follow the high-speed, high-reliability flowchart in programming all bits.
Figure 18-24 High-Speed, High-Reliability Erasing
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