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HD6433044 Datasheet, PDF (629/867 Pages) Hitachi Semiconductor – Hitachi Single-Chip Microcomputer
Table 18-22 DC Characteristics in PROM Mode
(Conditions: VCC = 5.0 V ±10%, VPP = 12.0 V ±0.6 V, VSS = 0 V, Ta = 25°C ±5°C)
Item
Symbol Min Typ Max
Unit Test Conditions
Input high
voltage
I/O7 to I/O0, VIH
A16 to A0,
OE, CE, WE
2.2 —
VCC + 0.3 V
Input low
I/O7 to I/O0, VIL
–0.3 — 0.8
V
voltage
A16 to A0,
OE, CE, WE
Output high
voltage
I/O7 to I/O0 VOH
2.4 — —
V
IOH = –200 µA
Output low
voltage
I/O7 to I/O0 VOL
— — 0.45
V
IOL = 1.6 mA
Input leakage I/O7 to I/O0, ILI
current
A16 to A0,
OE, CE, WE
— —2
µA
VIN = 0 to VCC V
VCC current Read
ICC
— 40 80
mA
Program
ICC
— 40 80
mA
Erase
ICC
— 40 80
mA
VPP current Read
IPP
— — 200
µA
VPP = 5.0 V
— 10 20
mA VPP = 12.6 V
Program
IPP
— 20 40
mA
Erase
IPP
— 20 40
mA
Note: For details on absolute maximum ratings, see section 21-1. Using an LSI in excess of
absolute maximum ratings may result in permanent damage*.
* VPP peak overshoot should not exceed 13 V.
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