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XC3S100E_06 Datasheet, PDF (142/231 Pages) Xilinx, Inc – Configurable Logic Block (CLB)
DC and Switching Characteristics
Block RAM Timing
Table 102: Block RAM Timing
Symbol
Description
Clock-to-Output Times
TBCKO
When reading from block RAM, the delay from the
active transition at the CLK input to data appearing at
the DOUT output
Setup Times
TBACK
Setup time for the ADDR inputs before the active
transition at the CLK input of the block RAM
TBDCK
Setup time for data at the DIN inputs before the active
transition at the CLK input of the block RAM
TBECK
Setup time for the EN input before the active transition
at the CLK input of the block RAM
TBWCK
Setup time for the WE input before the active transition
at the CLK input of the block RAM
Hold Times
TBCKA
Hold time on the ADDR inputs after the active transition
at the CLK input
TBCKD
Hold time on the DIN inputs after the active transition at
the CLK input
TBCKE
Hold time on the EN input after the active transition at
the CLK input
TBCKW
Hold time on the WE input after the active transition at
the CLK input
Clock Timing
TBPWH
High pulse width of the CLK signal
TBPWL
Low pulse width of the CLK signal
Clock Frequency
FBRAM
Block RAM clock frequency. RAM read output value
written back into RAM, for shift-registers and circular
buffers. Write-only or read-only performance is faster.
Speed Grade
-5
-4
Min
Max
Min
Max
-
2.45
-
2.82
0.33
-
0.38
-
0.23
-
0.23
-
0.67
-
0.77
-
1.09
-
1.26
-
0.12
-
0.14
-
0.12
-
0.13
-
0
-
0
-
0
-
0
-
1.39
-
1.59
-
1.39
-
1.59
-
0
270
0
230
Notes:
1. The numbers in this table are based on the operating conditions set forth in Table 76.
R
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MHz
142
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DS312-3 (v3.4) November 9, 2006
Product Specification