PIC32MX440F256H-80I Datasheet, PDF (597/646 Pages) Microchip Technology – 64/100-Pin General Purpose and USB 32-Bit Flash Microcontrollers

PIC32MX3XX/4XX
TABLE 30-5: DC CHARACTERISTICS: OPERATING CURRENT (IDD)⁽¹⁾
DC CHARACTERISTICS
Standard Operating Conditions: 2.3V to 3.6V
(unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for Industrial
Parameter
No.
Typical⁽³⁾
Max.
Units
Conditions
Operating Current (IDD)⁽²⁾
DC20
—
13
mA
2.3V
DC20a
DC20b
8.5
—
mA
—
13
mA
—
3.6V
4 MHz
DC20c
4.0
—
mA
Code executing from
—
SRAM
DC21
—
32
mA
2.3V
DC21a
DC21b
23.5
—
mA
—
32
mA
—
3.6V
20 MHz
DC21c
DC22
16.4
—
—
61
mA
Code executing from
SRAM
mA
—
2.3V
DC22a
DC22b
48
—
mA
—
61
mA
—
3.6V
60 MHz
DC22c
45
—
mA
Code executing from
SRAM
—
DC23
DC23a
DC23b
—
75
mA
55
—
mA
—
75
mA
2.3V
—
3.6V
80 MHz
DC23c
55
—
mA
Code executing from
SRAM
—
DC24
—
97
µA
-40°C
DC24a
DC24b
—
129
µA
—
670
µA
+25°C
+85°C
2.3V
DC25
94
—
µA
-40°C
DC25a
DC25b
125
—
µA
302
—
µA
+25°C
+85°C
3.3V
LPRC (31 kHz)
DC25c
DC26
71
—
µA
Code executing from
SRAM
—
107
µA
-40°C
DC26a
—
180
µA
+25°C
3.6V
DC26b
—
697
µA
+85°C
Note 1:
2:
3:
A device’s IDD supply current is mainly a function of the operating voltage and frequency. Other factors,
such as PBCLK (Peripheral Bus Clock) frequency, number of peripheral modules enabled, internal code
execution pattern, execution from Program Flash memory vs. SRAM, I/O pin loading and switching rate,
oscillator type as well as temperature can have an impact on the current consumption.
The test conditions for IDD measurements are as follows: Oscillator mode = EC+PLL with OSC1 driven by
external square wave from rail to rail and PBCLK divisor = 1:8. CPU, Program Flash and SRAM data mem-
ory are operational, Program Flash memory Wait states = 7, program cache and prefetch are disabled and
SRAM data memory Wait states = 1. All peripheral modules are disabled (ON bit = 0). WDT and FSCM are
disabled. All I/O pins are configured as inputs and pulled to VSS. MCLR = VDD.
Data in “Typical” column is at 3.3V, 25°C at specified operating frequency unless otherwise stated.
Parameters are for design guidance only and are not tested.
© 2008 Microchip Technology Inc.
Preliminary
DS61143E-page 595