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3069RF-ZTAT Datasheet, PDF (762/1003 Pages) Renesas Technology Corp – RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER
21.2.6 Flash Memory Characteristics
Table 21.20 shows the flash memory characteristics.
Table 21.20 Flash Memory Characteristics
Conditions: VCC = AVCC = 4.5 V to 5.5 V, VSS = AVSS = 0 V,
Ta = 0°C to +85°C (operating temperature range for programming/erasing :
Wide-range specifications)
Item
Symbol Min Typ Max Unit
Notes
Programming time*1 *2 *4
tP
—
3
30 ms/
128 bytes
Erase time*1 *2 *4
tE
—
80
800 ms/4k
blocks
—
500 5000 ms/32k
blocks
—
1000 10000 ms/64k
blocks
Programming time (total)*1 *2 *4
ΣtP
—
10
30
s/512k Ta = 25°C,
bytes all "0"
Erase time (total)*1 *2 *4
ΣtE
—
10
30
s/512k Ta = 25°C
bytes
Programming and erase time (total)*1 *2 *4
ΣtPE
—
20
60
s/512k
T = 25°C
a
bytes
Reprogramming count
NWEC
100*3 —
—
Data retention time*4
tDRP
10
—
—
Notes: 1. Programming and erase time depend on the data size.
times
year
2. Programming and erase time excluded the data transfer time.
3. It is the number of times of min. which guarantees all the characteristics after
reprogramming. (A guarantee is the range of a 1-min. value.)
4. It is the characteristic when reprogramming is performed by specification within the
limits including a min. value.
Rev. 5.0, 09/04, page 740 of 978