3069RF-ZTAT Datasheet, PDF (662/1003 Pages) Renesas Technology Corp – RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER

Table 18.13 Commands in PROM Mode
Memory
Number MAT to
1st Cycle
2nd Cycle
Command
of
be
Mode Address Data Mode Address Data
Cycles Accessed
Memory-read 1+n
mode
User MAT write
X
H'00 read RA
Dout
User boot write
MAT
X
H'05
Auto-program 129
User MAT write
X
H'40 write WA
Din
mode
User boot write
MAT
X
H'45
Auto-erase
2
mode
User MAT write
X
H'20 write X
H'20
User boot write
MAT
X
H'25
H'25
Status-read
2
mode
Common
to both
MATs
write
X
H'71 write X
H'71
Notes: 1. In auto-program mode, 129 cycles are required in command writing because of the
simultaneous 128-byte write.
2. In memory read mode, the number of cycles varies with the number of address writing
cycles (n).
18.9.3 Memory-Read Mode
(1) On completion of an automatic program, automatic erase, or status read, the LSI enters a
command waiting state. So, to read the contents of memory after these operations, issue the
command to change the mode to the memory-read mode before reading from the memory.
(2) In memory-read mode, the writing of commands is possible in the same way as in the
command-write state.
(3) After entering memory-read mode, continuous reading is possible.
(4) After power has first been supplied, the LSI enters the memory-read mode. For the AC
characteristics in memory read mode, see section 18.10.2, AC Characteristics and Timing in
Writer Mode.
Rev. 5.0, 09/04, page 640 of 978