DRA790 Datasheet, PDF (151/436 Pages) Texas Instruments – Infotainment Applications Processor

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DRA790, DRA791
DRA793, DRA797
SPRS968A – AUGUST 2016 – REVISED FEBRUARY 2017
Table 5-12. Dual Voltage SDIO1833 DC Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
NOM
MAX
UNIT
I_{IN with}
pulldown
enabled
I_{IN with}
pullup
enabled
C_PAD
V_OH
V_OL
Input current at each I/O pin with weak pulldown enabled
measured when PAD = VDDS
Input current at each I/O pin with weak pullup enabled measured
when PAD = 0
Pad capacitance (including package capacitance)
Output high-level threshold (I_OH = 2 mA)
Output low-level threshold (I_OL = 2 mA)
40
10
0.75 × VDDS
100
290
µA
100
290
µA
5
pF
V
0.125 ×
V
VDDS
(1) VDDS in this table stands for corresponding power supply. For more information on the power supply name and the corresponding ball,
see Table 4-1, POWER [11] column.
(2) Hysteresis is enabled/disabled with CTRL_CORE_CONTROL_HYST_1.SDCARD_HYST register.
Table 5-13. Dual Voltage LVCMOS DC Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
NOM
MAX
1.8-V Mode
V_IH
V_IL
V_HYS
V_OH
V_OL
I_DRIVE
Input high-level threshold
Input low-level threshold
Input hysteresis voltage
Output high-level threshold (I_OH = 2 mA)
Output low-level threshold (I_OL = 2 mA)
Pin Drive strength at PAD Voltage = 0.45V or
VDDS-0.45V
0.65 × VDDS
100
VDDS-0.45
6
0.35 × VDDS
0.45
I_IN
I_OZ
I_{IN with pulldown}
enabled
I_{IN with pullup}
enabled
C_PAD
Z_O
3.3-V Mode
Input current at each I/O pin
I_OZ(I_PAD Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I_(PAD))
is measured and is reported as I_OZ
Input current at each I/O pin with weak pulldown
enabled measured when PAD = VDDS
Input current at each I/O pin with weak pullup
enabled measured when PAD = 0
Pad capacitance (including package capacitance)
Output impedance (drive strength)
16
16
50
120
210
60
120
200
4
40
V_IH
Input high-level threshold
2
V_IL
Input low-level threshold
0.8
V_HYS
Input hysteresis voltage
200
V_OH
Output high-level threshold (I_OH = 100 µA)
VDDS-0.2
V_OL
Output low-level threshold (I_OL = 100 µA)
0.2
I_DRIVE
Pin Drive strength at PAD Voltage = 0.45V or
6
VDDS-0.45V
I_IN
Input current at each I/O pin
65
I_OZ
I_OZ(I_PAD Current) for BIDI cell. This current is
65
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I_(PAD))
is measured and is reported as I_OZ
UNIT
V
V
mV
V
V
mA
µA
µA
µA
µA
pF
Ω
V
V
mV
V
V
mA
µA
µA
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Specifications 151