DRA790 Datasheet, PDF (147/436 Pages) Texas Instruments – Infotainment Applications Processor

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DRA790, DRA791
DRA793, DRA797
SPRS968A – AUGUST 2016 – REVISED FEBRUARY 2017
Table 5-7. Dual Voltage LVCMOS I²C DC Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
NOM
MAX
Signal Names in MUXMODE 0: i2c1_scl; i2c1_sda; i2c2_scl; i2c_sda;
Balls: G22 / G23 / G21 / F23
I²C Standard Mode – 1.8 V
V_IH
Input high-level threshold
0.7 × VDDS
V_IL
Input low-level threshold
V_hys
Hysteresis
0.1 × VDDS
I_IN
Input current at each I/O pin with an input voltage
between 0.1 × VDDS to 0.9 × VDDS
0.3 × VDDS
12
I_OZ
C_IN
V_OL3
I_OZ(I_PAD Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I_(PAD))
is measured and is reported as I_OZ
Input capacitance
Output low-level threshold open-drain at 3-mA
sink current
12
10
0.2 × VDDS
I_OLmin
Low-level output current @V_OL=0.2 × VDDS
3
t_OF
Output fall time from V_IHmin to V_ILmax with a bus
250
capacitance CB from 5 pF to 400 pF
I²C Fast Mode – 1.8 V
V_IH
Input high-level threshold
0.7 × VDDS
V_IL
Input low-level threshold
V_hys
Hysteresis
0.1 × VDDS
I_IN
Input current at each I/O pin with an input voltage
between 0.1 × VDDS to 0.9 × VDDS
0.3 × VDDS
12
I_OZ
C_IN
V_OL3
I_OZ(I_PAD Current) for BIDI cell. This current is
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I_(PAD))
is measured and is reported as I_OZ
Input capacitance
Output low-level threshold open-drain at 3-mA
sink current
12
10
0.2 × VDDS
I_OLmin
Low-level output current @V_OL=0.2 × VDDS
3
t_OF
Output fall time from V_IHmin to V_ILmax with a bus
20+0.1 × Cb
250
capacitance CB from 10 pF to 400 pF
I²C Standard Mode – 3.3 V
V_IH
Input high-level threshold
0.7 × VDDS
V_IL
Input low-level threshold
V_hys
Hysteresis
0.05 × VDDS
I_IN
Input current at each I/O pin with an input voltage
31
between 0.1 × VDDS to 0.9 × VDDS
0.3 × VDDS
80
I_OZ
I_OZ(I_PAD Current) for BIDI cell. This current is
31
80
contributed by the tristated driver leakage + input
current of the Rx + weak pullup/pulldown leakage.
PAD is swept from 0 to VDDS and the Max(I_(PAD))
is measured and is reported as I_OZ
C_IN
Input capacitance
10
V_OL3
Output low-level threshold open-drain at 3-mA
0.4
sink current
I_OLmin
Low-level output current @V_OL=0.4V
3
I_OLmin
Low-level output current @V_OL=0.6V for full drive
6
load (400pF/400KHz)
UNIT
V
V
V
µA
µA
pF
V
mA
ns
V
V
V
µA
µA
pF
V
mA
ns
V
V
V
µA
µA
pF
V
mA
mA
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Specifications 147