DRA790 Datasheet, PDF (150/436 Pages) Texas Instruments – Infotainment Applications Processor

DRA790, DRA791
DRA793, DRA797
SPRS968A – AUGUST 2016 – REVISED FEBRUARY 2017
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(6) This value includes a ground difference of 50 mV between the transmitter and the receiver, the static common-mode level tolerance and
variations below 450 MHz.
(7) This number corresponds to the VOD_MAX transmitter.
(8) Common mode is defined as the average voltage level of X and Y: V_CMRX = (V_X + V_Y) / 2.
(9) Common mode ripple may be due to t_R or t_F and transmission line impairments in the PCB.
(10) For more information regarding the pin name (or ball name) and corresponding signal name, see Table 4-5 CSI 2 Signal Descriptions.
Table 5-11. BMLB18 Buffers DC Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
NOM
Signal Names in MUXMODE 0: mlbp_dat_n / mlbp_dat_p / mlbp_sig_n / mlbp_sig_p / mlbp_clk_n / mlbp_clk_p;
Balls: T1 / T2 / U4 / T3 / U1 / U2;
1.8-V Mode
V_IH/V_IL
Input high-level threshold
VCM ±
50mV
V_HYS
V_OD
Input hysteresis voltage
Differential output voltage (measured with 50ohm resistor
between PAD and PADN)
NONE
300
V_CM
Common mode output voltage
1
C_PAD
Pad capacitance (including package capacitance)
MAX UNIT
V
mV
500 mV
1.5
V
4
pF
Table 5-12. Dual Voltage SDIO1833 DC Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
NOM
MAX
Signal Names in Mode 0: mmc1_clk, mmc1_cmd, mmc1_data[3:0]
Bottom Balls: U3 / V4 / V3 / V2 / W1 / V1
1.8-V Mode
V_IH
Input high-level threshold
V_IL
Input low-level threshold
V_HYS
Input hysteresis voltage
I_IN
Input current at each I/O pin
I_OZ
I_OZ(I_PAD Current) for BIDI cell. This current is contributed by the
tristated driver leakage + input current of the Rx + weak
pullup/pulldown leakage. PAD is swept from 0 to VDDS and the
Max(I(PAD)) is measured and is reported as I_OZ
I_{IN with}
pulldown
Input current at each I/O pin with weak pulldown enabled
measured when PAD = VDDS
enabled
I_{IN with}
pullup
Input current at each I/O pin with weak pullup enabled measured
when PAD = 0
enabled
C_PAD
Pad capacitance (including package capacitance)
V_OH
Output high-level threshold (I_OH = 2 mA)
V_OL
Output low-level threshold (I_OL = 2 mA)
3.3-V Mode
1.27
50 ⁽²⁾
50
60
1.4
0.58
30
30
120
210
120
200
5
0.45
V_IH
Input high-level threshold
0.625 ×
VDDS
V_IL
V_HYS
I_IN
I_OZ
Input low-level threshold
Input hysteresis voltage
Input current at each I/O pin
I_OZ(I_PAD Current) for BIDI cell. This current is contributed by the
tristated driver leakage + input current of the Rx + weak
pullup/pulldown leakage. PAD is swept from 0 to VDDS and the
Max(I(PAD)) is measured and is reported as I_OZ
40 ⁽²⁾
0.25 × VDDS
110
110
UNIT
V
V
mV
µA
µA
µA
µA
pF
V
V
V
V
mV
µA
µA
150 Specifications
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