S912XHY128F0VLM Datasheet, PDF (740/802 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

Electrical Characteristics
t= 350 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
A.3.1.14 Erase Verify D-Flash Section (FCMD=0x10)
Erase Verify D-Flash for a given number of words N_W is given by .
t_check ≈ (840 + NW) ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
A.3.1.15 D-Flash Programming (FCMD=0x11)
D-Flash programming time is dependent on the number of words being programmed and their location
with respect to a row boundary, because programming across a row boundary requires extra steps. The D-
Flash programming time is specified for different cases (1,2,3,4 words and 4 words across a row boundary)
at a 40MHz bus frequency. The typical programming time can be calculated using the following equation,
whereby N_w denotes the number of words; BC=0 if no boundary is crossed and BC=1 if a boundary is
crossed.
t_dpgm = _{⎝⎛(}15 + (54 ⋅ N_w) + (16 ⋅ BC)) ⋅ -_f--_N---_V---¹-_M----_O---_P-_⎠⎞ + _{⎝⎛(}460 + (640 ⋅ N_W) + (500 ⋅ BC)) ⋅ _f---_N---_V----_M¹----_B---_U---_{S⎠⎞}
The maximum programming time can be calculated using the following equation
t_dpgm
=
⎛
⎝
(
15
+
( 56
⋅
N_w
)
+
( 16
⋅
BC))
⋅
f^---_N^---_V^---1-_M^----_O^---_P^{-⎠⎞}
+ _{⎝⎛(}460 + (840 ⋅ N_W) + (500 ⋅ BC)) ⋅ _f---_N---_V----_M¹----_B---_U---_{S⎠⎞}
A.3.1.16 Erase D-Flash Sector (FCMD=0x12)
Typical D-Flash sector erase times are those expected on a new device, where no margin verify fails occur.
They can be calculated using the following equation.
t_eradf ≈ 5025 ⋅ _{f--N-----V----M-1-----O-----P--} + 700 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
Maximum D-Fash sector erase times can be calculated using the following equation.
t_eradf ≈ 20100 ⋅ _{f--N-----V----M-1-----O-----P--} + 3300 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
The D-Flash sector erase time on a new device is ~5ms and can extend to 20ms as the flash is cycled.
MC9S12XHY-Family Reference Manual, Rev. 1.01
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Freescale Semiconductor