S912XHY128F0VLM Datasheet, PDF (661/802 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

128 KByte Flash Module (S12XFTMR128K1V1)
Table 19-56. Erase Verify D-Flash Section Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x10
Global address [22:16] to
identify the D-Flash block
001
Global address [15:0] of the first word to be verified
010
Number of words to be verified
Upon clearing CCIF to launch the Erase Verify D-Flash Section command, the Memory Controller will
verify the selected section of D-Flash memory is erased. The CCIF flag will set after the Erase Verify
D-Flash Section operation has completed.
Table 19-57. Erase Verify D-Flash Section Command Error Handling
Register
FSTAT
Error Bit
ACCERR
FPVIOL
MGSTAT1
MGSTAT0
Error Condition
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see Table 19-25)
Set if an invalid global address [22:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the requested section breaches the end of the D-Flash block
None
Set if any errors have been encountered during the read
Set if any non-correctable errors have been encountered during the read
19.3.2.15 Program D-Flash Command
The Program D-Flash operation programs one to four previously erased words in the D-Flash block. The
Program D-Flash operation will confirm that the targeted location(s) were successfully programmed upon
completion.
CAUTION
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
Table 19-58. Program D-Flash Command FCCOB Requirements
CCOBIX[2:0]
000
001
010
011
100
FCCOB Parameters
0x11
Global address [22:16] to
identify the D-Flash block
Global address [15:0] of word to be programmed
Word 0 program value
Word 1 program value, if desired
Word 2 program value, if desired
MC9S12XHY-Family Reference Manual, Rev. 1.01
Freescale Semiconductor
661