S912XHY128F0VLM Datasheet, PDF (739/802 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

A.3.1.8 Erase P-Flash Block (FCMD=0x09)
Erasing a 256K NVM block takes
tmass ≈ 100100 ⋅ _{f--N-----V----M-1-----O-----P--} + 70000 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
Erasing a 128K NVM block takes
tmass ≈ 100100 ⋅ _{f--N-----V----M-1-----O-----P--} + 35000 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
A.3.1.9 Erase P-Flash Sector (FCMD=0x0A)
The typical time to erase a1024-byte P-Flash sector can be calculated using
t_era = _⎝⎛20020 ⋅ _f---_N---_V---¹-_M----_O---_P-_⎠⎞ + _⎝⎛700 ⋅ _f---_N---_V----_M¹----_B---_U---_{S⎠⎞}
The maximum time to erase a1024-byte P-Flash sector can be calculated using
t_era
=
⎛
⎝
20020
⋅
f^---_N^---_V^---1-_M^----_O^---_P^{-⎠⎞}
+ _⎝⎛1100 ⋅ _f---_N---_V----_M¹----_B---_U---_{S⎠⎞}
A.3.1.10 Unsecure Flash (FCMD=0x0B)
The maximum time for unsecuring the flash is given by
tuns=
⎛
⎝
100100
⋅
f--N-----V----M-1-----O-----P--
+ 70000 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-_⎠⎞
A.3.1.11 Verify Backdoor Access Key (FCMD=0x0C)
The maximum verify backdoor access key time is given by
t= 400 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
A.3.1.12 Set User Margin Level (FCMD=0x0D)
The maximum set user margin level time is given by
t= 350 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
A.3.1.13 Set Field Margin Level (FCMD=0x0E)
The maximum set field margin level time is given by
Electrical Characteristics
MC9S12XHY-Family Reference Manual, Rev. 1.01
Freescale Semiconductor
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