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S912XHY128F0VLM Datasheet, PDF (620/802 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers | |||
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D-Flash Sector â The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
NVM Command Mode â An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase â An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes eight
ECC bits for single bit fault correction and double bit fault detection within the phrase.
P-Flash Memory â The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector â The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 1024 bytes.
Program IFR â Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once ï¬eld. The Program IFR is visible in the global memory map by
setting the PGMIFRON bit in the MMCCTL1 register.
19.1.2 Features
19.1.2.1 P-Flash Features
⢠Single bit fault correction and double bit fault detection within a 64-bit phrase during read
operations
⢠Automated program and erase algorithm with verify and generation of ECC parity bits
⢠Fast sector erase and phrase program operation
⢠Flexible protection scheme to prevent accidental program or erase of P-Flash memory
19.1.2.2 D-Flash Features
⢠Single bit fault correction and double bit fault detection within a word during read operations
⢠Automated program and erase algorithm with verify and generation of ECC parity bits
⢠Fast sector erase and word program operation
⢠Protection scheme to prevent accidental program or erase of D-Flash memory
⢠Ability to program up to four words in a burst sequence
19.1.2.3 Other Flash Module Features
⢠No external high-voltage power supply required for Flash memory program and erase operations
⢠Interrupt generation on Flash command completion and Flash error detection
⢠Security mechanism to prevent unauthorized access to the Flash memory
MC9S12XHY-Family Reference Manual, Rev. 1.01
Freescale Semiconductor
620
Preliminary
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