S912XHY128F0VLM Datasheet, PDF (721/802 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

Electrical Characteristics
Table A-2. ESD and Latch-up Test Conditions
Model
Description
Human Body Series resistance
Storage capacitance
Number of pulse per pin
Positive
Negative
Charged Device Number of pulse per pin
Positive
Negative
Latch-up
Minimum input voltage limit
Maximum input voltage limit
Symbol
R1
C
—
—
—
—
—
—
Value
1500
100
1
1
3
3
–2.5
7.5
Unit
Ohm
pF
V
V
Num
1
2
3
4
Table A-3. ESD and Latch-Up Protection Characteristics
C
Rating
C Human Body Model (HBM)
C Charge Device Model (CDM) corner pins
Charge Device Model (CDM) edge pins
C Latch-up current at T_A = 125°C
Positive
Negative
C Latch-up current at T_A = 27°C
Positive
Negative
Symbol
V_HBM
V_CDM
I_LAT
I_LAT
Min
2000
750
500
+100
–100
+200
–200
Max
Unit
—
V
—
V
—
mA
—
—
mA
—
—
A.1.7 Operating Conditions
This section describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE
Please refer to the temperature rating of the device (C, V, M) with regards to
the ambient temperature T_A and the junction temperature T_J. For power
dissipation calculations refer to Section A.1.8, “Power Dissipation and
Thermal Characteristics”.
Table A-4. Operating Conditions
Rating
I/O, regulator and analog supply voltage
NVM logic supply voltage²
Voltage difference V_DDX to V_DDA to V_DDM
Symbol
V_DD35
V_DDF
∆_VDDX
Min
3.13¹
2.7
Typ
Max
5
5.5
2.8
2.9
refer to Table A-12
Unit
V
V
MC9S12XHY-Family Reference Manual, Rev. 1.01
Freescale Semiconductor
721