HD6417750RF240V Datasheet, PDF (553/606 Pages) Renesas Technology Corp – Renesas 16-Bit Single-Chip Microcomputer H8S Family/H8S/2600 Series

Section 21 Electrical Characteristics
21.5 Flash Memory Characteristics
Table 21.8 lists the flash memory characteristics.
Table 21.8 Flash Memory Characteristics
Conditions: V_CC = 4.5 V to 5.5 V, AV_CC = 4.5 V to 5.5 V, V_SS = PLLV_SS = AV_SS = 0 V,
T_a = 0 to +75°C (Programming/erasing operating temperature range)
Item
Programming time^{*1 *2 *4}
Erase time^{*1 *3 *5}
Reprogramming count
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^{*1 *4}
Symbol Min.
t_P
—
t_E
—
N_WEC
—
t_sswe
1
t_spsu
50
t_sp30
28
t_sp200
198
t_sp10
8
Erase
Wait time after P bit clear^*1
t_cp
5
Wait time after PSU bit clear^*1
t_cpsu
5
Wait time after PV bit setting^*1
t_spv
4
Wait time after H'FF dummy write^*1 t_spvr
2
Wait time after PV bit clear^*1
t_cpv
2
Wait time after SWE bit clear^*1
t_cswe
100
Maximum programming count^{*1 *4} N
—
Wait time after SWE bit setting^*1
t_sswe
1
Wait time after ESU bit setting^*1
t_sesu
100
Wait time after E bit setting^{*1 *5}
t_se
10
Wait time after E bit clear^*1
t_ce
10
Wait time after ESU bit clear^*1
t_cesu
10
Wait time after EV bit setting^*1
t_sev
20
Wait time after H'FF dummy write^*1 t_sevr
2
Wait time after EV bit clear^*1
t_cev
4
Wait time after SWE bit clear^*1
t_cswe
100
Maximum erase count^{*1 *5}
N
12
Typ.
10
100
—
1
50
30
200
10
5
5
4
2
2
100
—
1
100
10
10
10
20
2
4
100
—
Max.
200
1200
100
—
—
32
202
12
—
—
—
—
—
—
1000
—
—
100
—
—
—
—
—
—
120
Test
Unit
Condition
ms/
128 bytes
ms/block
times
µs
µs
µs
Programming
time wait
µs
Programming
time wait
µs
Additional-
programming
time wait
µs
µs
µs
µs
µs
µs
times
µs
µs
ms
Erase time
wait
µs
µs
µs
µs
µs
µs
times
Rev. 7.00 Sep. 11, 2009 Page 517 of 566
REJ09B0211-0700