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SH7052 Datasheet, PDF (811/919 Pages) Renesas Technology Corp – SuperHTM RISC engine
VCC
RES
tosc1
Memory read
mode
Command Auto-program mode
tbmv wait state
Auto-erase mode
Command wait state
Normal/abnormal
end decision tdwn
FWE
Note: In modes other than auto-program mode and auto-erase mode, the FWE input pin should be
driven low.
Figure 21.28 Oscillation Stabilization Time, Boot Program Transfer Time, and
Power-Down Sequence
21.11.9 Notes on Memory Programming
1. When programming addresses which have previously been programmed, carry out auto-
erasing before auto-programming.
2. When performing programming using programmer mode on a chip that has been
programmed/erased in an on-board programming mode, auto-erasing is recommended before
carrying out auto-programming.
Notes: 1. The flash memory is initially in the erased state when the device is shipped by Hitachi.
For other chips for which the erasure history is unknown, it is recommended that auto-
erasing be executed to check and supplement the initialization (erase) level.
2. Auto-programming should be performed once only on the same address block.
Additional programming cannot be performed on previously programmed address
blocks.
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