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MC912D60ACPVE8 Datasheet, PDF (412/460 Pages) Freescale Semiconductor, Inc – MC68HC912D60A MC68HC912D60C MC68HC912D60P Technical Data
Electrical Specifications
Table 20-10. Flash EEPROM Characteristics
VDD = 5.0 Vdc ±10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted
Characteristic
Symbol Min
Max
Bytes per row
—
64
64
Read bus clock frequency
Erase time
PGM/ERAS to HVEN set up time
High voltage hold time
High voltage hold time (erase)
Program hold time
Program time
Return to read time
Cumulative program hv period
Row program/erase endurance
fREAD
32K
8M
tERAS
8
8
tNVS
10
—
tNVL
5
—
tNVHL
100
—
tPGS
5
—
tFPGM
30
40
tRCV
1
—
tHV
—
8
—
100
Data retention
—
10(1)
1. Based on the average life time operating temperature of 70°C.
Units
Bytes
Hz
ms
µs
µs
µs
µs
µs
µs
ms
cycles
years
Table 20-11. Pulse Width Modulator Characteristics
VDD = 5.0 Vdc ±10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted
Characteristic
Symbol
Min
Max
ECLK frequency
feclk
0.004
8.0
A-clock frequency
Selectable
faclk
feclk/128
feclk
BCLK frequency
Selectable
fbclk
feclk/128
feclk
Left-aligned PWM frequency
8-bit
16-bit
Left-aligned PWM resolution
Center-aligned PWM frequency
8-bit
16-bit
Center-aligned PWM resolution
flpwm
rlpwm
feclk/1M
feclk/256M
feclk/4K
feclk/2
feclk/2
feclk
fcpwm
feclk/2M
feclk
feclk/512M
feclk
rcpwm
feclk/4K
feclk
Unit
MHz
Hz
Hz
Hz
Hz
Hz
Hz
Hz
Hz
Technical Data
412
Electrical Specifications
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor