MC912D60ACPVE8 Datasheet, PDF (103/460 Pages) Freescale Semiconductor, Inc – MC68HC912D60A MC68HC912D60C MC68HC912D60P Technical Data

Flash Memory
7.9 Erasing the Flash EEPROM
The following sequence demonstrates the recommended procedure for
erasing any of the Flash EEPROM array.
1. Set the ERAS bit.
2. Write to any valid aligned word address in the Flash array. The
data written and the address written are not important. The boot
block will be erased only if the control bit BOOTP is negated.
3. Wait for a time, t_NVS (min. 10µs).
4. Set the HVEN bit.
5. Wait for a time, t_ERAS (8ms).
6. Clear the ERAS bit.
7. Wait for a time, t_NVHL (min. 100µs).
8. Clear the HVEN bit.
9. After time, t_RCV (min 1µs), the memory can be accessed in read
mode again.
7.10 Stop or Wait Mode
When stop or wait commands are executed, the MCU puts the Flash
EEPROM in stop or wait mode. In these modes the Flash module will
cease erasure or programming immediately.
CAUTION: It is advised not to enter stop or wait modes when program or erase
operation of the Flash array is in progress.
Technical Data
103
Flash Memory
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor