MC912D60ACPVE8 Datasheet, PDF (113/460 Pages) Freescale Semiconductor, Inc – MC68HC912D60A MC68HC912D60C MC68HC912D60P Technical Data

EEPROM Memory
EEPROM Control Registers
.
EEPROG — EEPROM Control
Bit 7
6
BULKP
0
RESET:
1
0
5
AUTO
0
4
BYTE
0
3
ROW
0
2
ERASE
0
1
EELAT
0
Bit 0
EEPGM
0
$00F3
BULKP — Bulk Erase Protection
0 = EEPROM can be bulk erased.
1 = EEPROM is protected from being bulk or row erased.
Read anytime. Write anytime if EEPGM = 0 and PROTLCK = 0.
AUTO — Automatic shutdown of program/erase operation.
EEPGM is cleared automatically after the program/erase cycles are
finished when AUTO is set.
0 = Automatic clear of EEPGM is disabled.
1 = Automatic clear of EEPGM is enabled.
Read anytime. Write anytime if EEPGM = 0.
BYTE — Byte and Aligned Word Erase
0 = Bulk or row erase is enabled.
1 = One byte or one aligned word erase only.
Read anytime. Write anytime if EEPGM = 0.
ROW — Row or Bulk Erase (when BYTE = 0)
0 = Erase entire EEPROM array.
1 = Erase only one 32-byte row.
Read anytime. Write anytime if EEPGM = 0.
BYTE and ROW have no effect when ERASE = 0
Table 8-3. Erase Selection
BYTE
0
0
1
1
ROW
0
1
0
1
Block size
Bulk erase entire EEPROM array
Row erase 32 bytes
Byte or aligned word erase
Byte or aligned word erase
If BYTE = 1 only the location specified by the address written to the
programming latches will be erased. The operation will be a byte or
an aligned word erase depending on the size of written data.
MC68HC912D60A — Rev. 3.1
Freescale Semiconductor
EEPROM Memory
Technical Data
113