HD64F3048F16 Datasheet, PDF (701/903 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 21 Electrical Characteristics
Table 21.11 Flash Memory Characteristics (2)
Conditions: V_CC = 3.0 to 3.6 V, AV_CC = 3.0 to 3.6 V, V_REF = 3.0 V to AV_CC, V_SS = AV_SS = 0 V,
T_a = 0°C to +75°C (operating temperature range for programming/erasing)
Item
Symbol Min Typ Max Unit
Notes
Programming time^{*1 *2 *4}
t_P
— 10 200 ms/
128 bytes
Erase time^{*1 *3 *5}
Reprogramming count
Programming Wait time after SWE bit setting^*1
Wait time after PSU bit setting^*1
Wait time after P bit setting^{*1 *4}
t_E
N_WEC
t_sswe
t_spsu
t_sp30
— 100 1200 ms/block
— — 100 Times
1
1
— µs
50 50 — µs
28 30 32 µs
Programming
time wait
t_sp200
198 200 202 µs
Programming
time wait
t_sp10
8
10 12 µs
Additional-
programming
time wait
Wait time after P bit clear^*1
t_cp
Wait time after PSU bit clear^*1
t_cpsu
Wait time after PV bit setting^*1
t_spv
Wait time after H'FF dummy
t_spvr
write^*1
5
5
— µs
5
5
— µs
4
4
— µs
2
2
— µs
Wait time after PV bit clear^*1
t_cpv
Wait time after SWE bit clear^*1 t_cswe
Maximum programming
N
count^{*1 *4}
2
2
— µs
100 100 — µs
— — 1000 Times
Erase
Wait time after SWE bit setting^*1 t_sswe
Wait time after ESU bit setting^*1 t_sesu
Wait time after E bit setting^{*1 *5} t_se
Wait time after E bit clear^*1
t_ce
Wait time after ESU bit clear^*1
t_cesu
Wait time after EV bit setting^*1
t_sev
Wait time after H'FF dummy
t_sevr
write^*1
1
1
— µs
100 100 — µs
10 10 100 ms
10 10 — µs
10 10 — µs
20 20 — µs
2
2
— µs
Erase time wait
Wait time after EV bit clear^*1
t_cev
Wait time after SWE bit clear^*1 t_cswe
Maximum erase count^{*1 *5}
N
4
4
— µs
100 100 — µs
12 — 120 Times
Rev. 3.00 Sep 27, 2006 page 673 of 872
REJ09B0325-0300