HD64F3048F16 Datasheet, PDF (700/903 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

Section 21 Electrical Characteristics
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes. (Shows the total time the P bit in the flash memory
control register (FLMCR1) is set. It does not include the programming verification time.)
3. Block erase time. (Shows the total time the E bit in FLMCR1 is set. It does not include
the erase verification time.)
4. To specify the maximum programming time value (t_P(max)) in the 128-byte
programming algorithm, set the max. value (1000) for the maximum programming count
(N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
t_sp30 = 30 µs
Programming counter (n) = 7 to 1000:
t = 200 µs
sp200
Programming counter (n) [in additional programming] = 1 to 6: t_sp10 = 10 µs
5. For the maximum erase time (t_E(max)), the following relationship applies between the
wait time after E bit setting (t_se) and the maximum erase count (N):
t_E(max) = Wait time after E bit setting (t_se) x maximum erase count (N)
To set the maximum erase time, the values of t_se and N should be set so as to satisfy
the above formula.
Examples:
When t_se = 100 [ms], N = 12
When t = 10 [ms], N = 120
se
Rev. 3.00 Sep 27, 2006 page 672 of 872
REJ09B0325-0300