SA1110 Datasheet, PDF (401/406 Pages) Intel Corporation – Intel StrongARM SA-1110 Microprocessor

32.768–KHz Oscillator Specifications
C.1.2
Parasitic capacitance off-chip
between TXTAL or TEXTAL and VSS
Parasitic resistance between
TXTAL or TEXTAL to VSS
Parasitic resistance between
TXTAL and TEXTAL
—
—
2
pF
10
—
—
MΩ
10
—
—
MΩ
Quartz Crystal Specification
The following specifications for the quartz crystal are shown in the figure and table below.
Resonance Frequency (fs):
Motional Capacitance (Cm):
Motional Inductance (Lm):
Motional Resistance (Rm):
Shunt Capacitance (Co):
Load Capacitance (CL):
Drive Level:
Aging:
Resonance frequency of the crystal.
Equivalent serial capacitance in the crystal model.
Not generally given in supplier specification.
Equivalent serial resistance in the crystal model. Some crystal
providers refer to this resistance as the Equivalent Series
Resistance (ESR) or simply Series Resistance.
Other providers supply a Quality Factor, Q, instead of Rm;
therefore, the values for Q
corresponding to specified range of Rm are supplied in the
following table.
Parasitic capacitance between Q1 and Q2.
Needed load capacitance viewed by the crystal to oscillate at fs.
Power dissipated in the equivalent serial resistance (Rm).
Resonance frequency shift due to aging.
Co
Q1
Q2
Cm
Lm
Rm
SA-1110 Developer’s Manual
C-3