SA1110 Datasheet, PDF (397/406 Pages) Intel Corporation – Intel StrongARM SA-1110 Microprocessor

3.6864–MHz Oscillator Specifications
B.1.2
Quartz Crystal Specification
The following specifications for the quartz crystal are shown in the figure and table below.
Resonance frequency (fs):
Motional capacitance (Cm):
Motional inductance (Lm):
Motional resistance (Rm):
Shunt capacitance (Co):
Load capacitance (CL):
Drive level:
Aging:
Resonance frequency of the crystal.
Equivalent serial capacitance in the crystal
model.
Not generally given in supplier specification.
Equivalent serial resistance in the crystal
model. Some crystal providers refer to this
resistance as the Equivalent Series
Resistance (ESR) or simply Series
Resistance.
Parasitic capacitance between Q1 and Q2.
Needed load capacitance viewed by the
crystal to oscillate at fs.
Power dissipated in the equivalent serial
resistance (Rm).
Resonance frequency shift due to aging.
Co
Q1
Q2
Cm
Lm
Rm
Specification
Resonance frequency (fs)
Motional resistance (Rm)
Shunt capacitance (Co)
Drive level
Crystal type
Minimum
3.5795
40
—
—
AT cut crystal
Typical
3.6864
180
—
—
Maximum
—
300
7
10
Unit
MHz
W
pF
µW
SA-1110 Developer’s Manual
B-3