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SA1110 Datasheet, PDF (30/406 Pages) Intel Corporation – Intel StrongARM SA-1110 Microprocessor
Functional Description
2.3
Signal Description
Table 2-1.
The following table describes the signals.
Key to Signal Types: n – Active low signal
IC – Input, CMOS threshold
ICOCZ – Input, CMOS threshold, output CMOS levels, tristatable
OCZ – Output, CMOS levels, tristatable
Signal Descriptions (Sheet 1 of 4)
Name
Type
Description
A 25:0
D 31:0
nCS 5:0
RDY
nOE
nWE
nRAS 3:0/
nSDCS 3:0
nCAS 3:0/
DQM 3:0
nSDRAS
nSDCAS
SDCKE 1:0
OCZ
ICOCZ
OCZ
IC
OCZ
OCZ
OCZ
OCZ
OCZ
OCZ
OCZ
Memory address bus. This bus signals the address requested for memory
accesses.
Bits 24..10 carry the 15-bit DRAM address. The static memory devices and the
expansion bus receive address bits 25..0.
Memory data bus. Bits 15..0 are used for 16-bit data busses.
Static chip selects. These signals are chip selects to static memory devices such
as ROM and Flash. They are individually programmable in the memory
configuration registers. Bits 5..3 can be used with variable latency I/O devices.
Static data ready signal for nCS 5:3. This signal should be connected to the data
ready output pins of variable latency I/O devices that require variable data
latencies. Devices selected by nCS 5:3 can share the RDY pin if they drive it high
prior to tristating and a weak external pull-up is present.
Memory output enable. This signal should be connected to the output enables of
memory devices to control their data bus drivers.
Memory write enable. This signal should be connected to the write enables of
memory devices.This signal is used in conjunction with nCAS 3:0 to perform byte
writes.
DRAM RAS or SDRAM CS for banks 0 through 3. These signals should be
connected to the row address strobe (RAS) pins for asynchronous DRAM or the
chip select (CS) pins for SDRAM.
DRAM CAS or SDRAM DQM for data banks 0 through 3. These signals should be
connected to the column address strobe (CAS) pins for asynchronous DRAM or
the data output mask enables (DQM) for SDRAM.
SDRAM RAS. This signal should be connected to the row address strobe (RAS)
pins for all banks of SDRAM.
SDRAM CAS. This signal should be connected to the column address strobe
(CAS) pins for all banks of SDRAM.
SDRAM and/or SMROM clock enables.
SDCKE 0 should be connected to the clock enable (CKE) pins of SMROM.
SDCKE 0 is asserted upon any rest (including sleep-exit) if static memory
bank 0 (boot space) is configured for synchronous mask ROM (SMROM_EN = 1);
otherwise it is deasserted upon reset.
SDCKE 1 should be connected to the clock enable pins of SDRAM.They are
deasserted (held low) during sleep. SDCKE 1 always is deasserted upon reset.
The memory controller provides control register bits for deassertion of each
SDCKE pin. However, SDCKE 0 cannot be deasserted via program if
SMROM_EN =1.
2-4
SA-1110 Developer’s Manual