LM3S9B81 Datasheet, PDF (211/1155 Pages) Texas Instruments – Stellaris® LM3S9B81 Microcontroller

Stellaris® LM3S9B81 Microcontroller
Bit/Field
2
1
0
Name
MERASE
ERASE
WRITE
Type
R/W
R/W
R/W
Reset
0
0
0
Description
Mass Erase Flash Memory
This bit is used to mass erase the Flash main memory and to monitor
the progress of that process.
Value Description
1 Set this bit to erase the Flash main memory.
When read, a 1 indicates that the previous mass erase access
is not complete.
0 A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous mass erase access
is complete.
A mass erase can take up to 16 ms.
Erase a Page of Flash Memory
This bit is used to erase a page of Flash memory and to monitor the
progress of that process.
Value Description
1 Set this bit to erase the Flash memory page specified by the
contents of the FMA register.
When read, a 1 indicates that the previous page erase access
is not complete.
0 A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous page erase access
is complete.
A page erase can take up to 25 ms.
Write a Word into Flash Memory
This bit is used to write a word into Flash memory and to monitor the
progress of that process.
Value Description
1 Set this bit to write the data stored in the FMD register into the
Flash memory location specified by the contents of the FMA
register.
When read, a 1 indicates that the write update access is not
complete.
0 A write of 0 has no effect on the state of this bit.
When read, a 0 indicates that the previous write update access
is complete.
Writing a single word can take up to 50 µs.
June 29, 2010
211
Texas Instruments-Advance Information