LM3S9B81 Datasheet, PDF (1083/1155 Pages) Texas Instruments – Stellaris® LM3S9B81 Microcontroller

Stellaris® LM3S9B81 Microcontroller
25.1.3
25.1.4
25.1.5
Table 25-2. Recommended DC Operating Conditions (continued)
Parameter Parameter Name
Min
I_OH
High-level source current, V_OH=2.4 V
2-mA Drive
2.0
4-mA Drive
4.0
8-mA Drive
8.0
I_OL
Low-level sink current, V_OL=0.4 V
2-mA Drive
2.0
4-mA Drive
4.0
8-mA Drive
8.0
a. V_DDC is supplied from the output of the LDO.
b. V_OL and V_OH shift to 1.2 V when using high-current GPIOs.
Nom
Max
-
-
-
-
-
-
-
-
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
On-Chip Low Drop-Out (LDO) Regulator Characteristics
Table 25-3. LDO Regulator Characteristics
Parameter Parameter Name
Min
Nom
Max
Unit
C_LDO
External filter capacitor size for internal
1.0
-
3.0
µF
power supply
V_LDO
LDO output voltage
1.08
1.2
1.32
V
Flash Memory Characteristics
Table 25-4. Flash Memory Characteristics
Parameter Parameter Name
Min
Nom
Max
Unit
PE_CYC
Number of guaranteed mass program/erase
cycles before failure^a
15,000
-
-
cycles
T_RET
Data retention at average operating temperature
10
-
-
of 125˚C
years
T_PROG
Word program time
-
-
1
ms
T_BPROG
Buffer program time
-
-
1
ms
T_ERASE
Page erase time
-
-
12
ms
T_ME
Mass erase time
-
-
16
ms
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1. Caution should be used when performing block
erases, as repeated block erases can shorten the number of guaranteed erase cycles, see “Flash Memory
Programming” on page 203.
GPIO Module Characteristics
Table 25-5. GPIO Module DC Characteristics
Parameter
R_GPIOPU
R_GPIOPD
Parameter Name
GPIO internal pull-up resistor
GPIO internal pull-down resistor
Min
Nom
Max
Unit
50
-
110
kΩ
55
-
180
kΩ
June 29, 2010
Texas Instruments-Advance Information
1083