LM3S9B81 Datasheet, PDF (1090/1155 Pages) Texas Instruments – Stellaris® LM3S9B81 Microcontroller

Electrical Characteristics
25.2.5
25.2.6
25.2.7
Figure 25-9. MOSC Failure Reset Timing
MOSC
Fail Reset
(Internal)
R10
/Reset
(Internal)
Sleep Modes
Table 25-18. Sleep Modes AC Characteristics^a
Parameter
No
Parameter
Parameter Name
Min Nom
D1
t_{WAKE_S}
Time to wake from interrupt in sleep or
-
-
deep-sleep mode, not using the PLL
D2
t_{WAKE_PLL_S} Time to wake from interrupt in sleep or
deep-sleep mode when using the PLL
-
-
D3
t_{ENTER_DS} Time to enter deep-sleep mode from sleep
-
0
request
a. Values in this table assume the IOSC is the clock source during sleep or deep-sleep mode.
b. Nominal specification occurs 99.9995% of the time.
Max
Unit
7
system clocks
T_READY
ms
16^b
ms
General-Purpose I/O (GPIO)
Note: All GPIOs are 5-V tolerant.
Table 25-19. GPIO Characteristics
Parameter Parameter Name Condition
Min Nom
Max
Unit
t_GPIOR
GPIO Rise Time
(from 20% to 80%
of V_DD)
2-mA drive
4-mA drive
8-mA drive
-
14
20
ns
7
10
ns
4
5
ns
8-mA drive with slew rate control
6
8
ns
t_GPIOF
GPIO Fall Time
(from 80% to 20%
of V_DD)
2-mA drive
4-mA drive
8-mA drive
-
14
21
ns
7
11
ns
4
6
ns
8-mA drive with slew rate control
6
8
ns
External Peripheral Interface (EPI)
When the EPI module is in SDRAM mode, the drive strength must be configured to 8 mA. Table
25-20 on page 1090 shows the rise and fall times in SDRAM mode with 16 pF load conditions. When
the EPI module is in Host-Bus or General-Purpose mode, the values in Table 25-19 on page 1090
should be used.
Table 25-20. EPI SDRAM Characteristics
Parameter Parameter Name
Condition
Min
t_SDRAMR
EPI Rise Time (from 20% to 80% of 8-mA drive, C_L = 16 pF
-
V_DD)
Nom
2
Max
3
Unit
ns
1090
Texas Instruments-Advance Information
June 29, 2010