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| HD64F2357F20V Datasheet, PDF (796/1049 Pages) Renesas Technology Corp – Hardware Manual Renesas 16-Bit Single-chip Microcomputer H8S Family / H8S/2300 Series | |||
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Item
Symbol Min Typ Max Unit
Test
Condition
Programming Wait time after PV bit clear*1η
4 ââ
µs
Maximum programming N
count*1*4
â â 1000*5 Times
z = 200 µs
Erase
Wait time after SWE bit x
setting*1
10 â â
µs
Wait time after ESU bit
y
setting*1
200 â â
µs
Wait time after E bit
setting*1*6
z
5 â 10 ms
Wait time after E bit clear*1 α
10 â â
µs
Wait time after ESU bit
β
clear*1
10 â â
µs
Wait time after EV bit
γ
setting*1
20 â â
µs
Wait time after HâFF dummy ε
write*1
2 ââ
µs
Wait time after EV bit clear*1η
5 ââ
µs
Maximum erase count*1*6 N
120 â 240 Times
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 32 bytes (Shows the total time the flash memory control register 1 (FLMCR1) is set. It
does not include the programming verification time.)
3. Block erase time (Shows the period the E bit in FLMCR1 is set. It does not include the erase verification time.)
4. Maximum programming time
(tp (max)=wait time after P-bit setting (z) Ã maximum programming count (N))
5. Number of times when the wait time after P bit setting (z) = 200 µs.
The maximum number of writes (N) should be set according to the actual set value of z so as not to exceed the
maximum programming time (tP(max)).
6. For the maximum erase time (tE(max)), the following relationship applies between the wait time after E bit setting
(z) and the maximum number of erases (N):
tE(max) = Wait time after E bit setting (z) Ã maximum number of erases (N)
The values of z and N should be set so as to satisfy the above formula.
Examples: When z = 5 [ms], N = 240 times
When z = 10 [ms], N = 120 times
Table 22-43 shows the flash memory characteristics.
Table 22-43 Flash Memory Characteristics (2)
Conditions:
VCC = 3.0 to 3.6 V, AVCC = 3.0 to 3.6 V, Vref = 3.0 V to AVCC, VSS=AVSS=0V
Ta=0 to +75°C (Programming/erasing operating temperature, regular specifications), Ta=0 to +85°C
(Programming/erasing operating temperature, wide-range specifications)
Item
Programming time*1*2*4
Erase time*1*3*5
Reprogramming count
Symbol Min Typ Max Unit
Test
Condition
tP
â 10 200 ms/32 bytes
tE
â 100 1200 ms/block
NWEC â â 100 Times
Rev.6.00 Oct.28.2004 page 766 of 1016
REJ09B0138-0600H
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