HD64F2357F20V Datasheet, PDF (681/1049 Pages) Renesas Technology Corp – Hardware Manual Renesas 16-Bit Single-chip Microcomputer H8S Family / H8S/2300 Series

19.22.4 Memory Read Mode
• After the end of an auto-program, auto-erase, or status read operation, the command wait state is entered. To read
memory contents, a transition must be made to memory read mode by means of a command write before the read is
executed.
• Command writes can be performed in memory read mode, just as in the command wait state.
• Once memory read mode has been entered, consecutive reads can be performed.
• After power-on, memory read mode is entered.
Table 19-42 AC Characteristics in Memory Read Mode
Conditions: V_CC = 5.0 V ±10%, V_SS = 0 V, T_a = 25°C ±5°C
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Symbol
t _nxtc
t _ceh
t _ces
t _dh
t _ds
t _wep
t_r
t_f
Min
20
0
0
50
50
70
—
—
Max
—
—
—
—
—
—
30
30
Unit
µs
ns
ns
ns
ns
ns
ns
ns
A₁₈ to A₀
Command write
Memory read mode
Address stable
CE
OE
WE
Data
t_wep t_ceh
t_nxtc
t_ces
t_f
t_r
H'00
t_dh
t_ds
Data
Note: Data is latched at the rising edge of WE.
Figure 19-55 Memory Read Mode Timing Waveforms after Command Write
Rev.6.00 Oct.28.2004 page 651 of 1016
REJ09B0138-0600H