MC68HC908AT32 Datasheet, PDF (368/378 Pages) Freescale Semiconductor, Inc – Microcontrollers

Electrical Specifications
29.12 Memory Characteristics
Characteristic
RAM data retention voltage
EEPROM write/erase cycles
@ 10 ms write time + 85°C
EEPROM data retention
After 10,000 write/erase cycles
FLASH bus clock period
FLASH erase time
FLASH high-voltage kill time
FLASH return to read time
FLASH program time, t_PROG
FLASH HVEN low to VERF high time, t_HVTV
FLASH VERIFY high to PGM low time, t_VTP
FLASH endurance
FLASH block endurance
Symbol
V_RDR
—
Min
0.7
10,000
—
10
t_cyc
250
t_Erase
500
t_Kill
200
t_HVD
50
t_Prog
1
t_HVTV
50
t_VTP
150
Erase/program cycles
—
Erase/program cycles for a block
while maintaining data in the rest of
—
the array
Max
—
—
—
—
—
—
—
100
—
—
1000
100
Unit
V
Cycles
Years
ns
ms
µs
µs
ms
µs
µs
Cycles
Cycles
29.13 BDLC Transmitter VPW Symbol Timings
Characteristic⁽¹⁾
Number
Symbol⁽²⁾
Min
Typ
Max
Unit
Passive logic 0
Passive logic 1
10
t_TVP1
62
64
66
µs
11
t_TVP2
126
128
130
µs
Active logic 0
12
t_TVA1
126
128
130
µs
Active logic 1
Start-of-frame (SOF)
End of data (EOD)
13
t_TVA2
62
64
66
µs
14
t_TVA3
198
200
202
µs
15
t_TVP3
198
200
202
µs
End of frame (EOF)
16
t_TV4
278
280
282
µs
Inter-frame separator (IFS)
17
t_TV6
298
300
302
µs
1. f_BDLC = 1.048576 or 1.0 MHz, V_DD = 5.0 V ± 10%, V_SS = 0 V.
2. The transmitter symbol timing boundaries are subject to an uncertainty of 1 t_BDLC µs due to sampling considerations.
MC68HC908AT32 Data Sheet, Rev. 3.1
368
Freescale Semiconductor