MC68HC912BD32 Datasheet, PDF (90/292 Pages) Freescale Semiconductor, Inc – Advance Information

EEPROM
Freescale Semiconductor, Inc.
EECPM — Charge Pump Monitor Enable
0 = Normal operation.
1 = Output the charge pump voltage on the IRQ/V_PP pin.
EEPROG — EEPROM Control
Bit 7
6
BULKP
0
RESET:
1
0
5
4
3
2
1
Bit 0
0
BYTE
ROW
ERASE EELAT EEPGM
0
0
0
0
0
0
$00F3
BULKP — Bulk Erase Protection
0 = EEPROM can be bulk erased.
1 = EEPROM is protected from being bulk or row erased.
Read anytime. Write anytime if EEPGM = 0 and PROTLCK = 0.
BYTE — Byte and Aligned Word Erase
0 = Bulk or row erase is enabled.
1 = One byte or one aligned word erase only.
Read anytime. Write anytime if EEPGM = 0.
ROW — Row or Bulk Erase (when BYTE = 0)
0 = Erase entire EEPROM array.
1 = Erase only one 32-byte row.
Read anytime. Write anytime if EEPGM = 0.
BYTE and ROW have no effect when ERASE = 0
Table 16 Erase Selection
BYTE
0
0
1
1
ROW
0
1
0
1
Block size
Bulk erase entire EEPROM array
Row erase 32 bytes
Byte or aligned word erase
Byte or aligned word erase
If BYTE = 1 and test mode is not enabled, only the location specified
by the address written to the programming latches will be erased. The
operation will be a byte or an aligned word erase depending on the
size of written data.
ERASE — Erase Control
0 = EEPROM configuration for programming.
1 = EEPROM configuration for erasure.
Read anytime. Write anytime if EEPGM = 0.
MC68HC912BD32 Rev 1.0
EEPROM
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6-eeprom