MC68HC912BD32 Datasheet, PDF (80/292 Pages) Freescale Semiconductor, Inc – Advance Information

Flash EEPROM
Freescale Semiconductor, Inc.
Erasing the Flash EEPROM
The following sequence demonstrates the recommended procedure for
erasing the Flash EEPROM. The V_FP pin voltage must be at the proper
level prior to executing step 4 the first time.
1. Turn on V_FP (apply program/erase voltage to the V_FP pin).
2. Set the LAT bit and ERAS bit to configure the Flash EEPROM for
erasing.
3. Write to any valid address in the Flash array. This allows the erase
voltage to be turned on; the data written and the address written
are not important. The boot block will be erased only if the control
bit BOOTP is negated.
4. Apply erase voltage by setting ENPE.
5. Delay for a single erase pulse (t_EPULSE).
6. Remove erase voltage by clearing ENPE.
7. Delay while high voltage is turning off (t_VERASE).
8. Read the entire array to ensure that the Flash EEPROM is erased.
9. If all of the Flash EEPROM locations are not erased, repeat steps
4 through 7 until either the remaining locations are erased, or until
the maximum erase pulses have been applied (n_EP)
10. If all of the Flash EEPROM locations are erased, repeat the same
number of pulses as required to erase the array. This provides
100% erase margin.
11. Read the entire array to ensure that the Flash EEPROM is erased.
12. Clear LAT.
13. Turn off V_FP (reduce voltage on V_FP pin to V_DD).
The flowchart in Figure 8 demonstrates the recommended erase
sequence.
MC68HC912BD32 Rev 1.0
Flash EEPROM
For More Information On This Product,
Go to: www.freescale.com
12-flash